TK1R5R04PB,LXGQ
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TK1R5R04PB,LXGQ |
---|---|
Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | MOSFET N-CH 40V 160A D2PAK |
Datenblätte: | None |
RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $2.69 |
10+ | $2.421 |
100+ | $1.9458 |
500+ | $1.5986 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
---|---|
VGS (th) (Max) @ Id | 3V @ 500µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | D2PAK+ |
Serie | U-MOSIX-H |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 80A, 10V |
Verlustleistung (max) | 205W (Tc) |
Verpackung / Gehäuse | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Paket | Tape & Reel (TR) |
Betriebstemperatur | 175°C |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 5500 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 6V, 10V |
Drain-Source-Spannung (Vdss) | 40 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 160A (Ta) |
Grundproduktnummer | TK1R5R04 |
TK19A50W,S5X(M TOSHIBA
TOSHIBA TO-220F
PB-F POWER MOSFET TRANSISTOR TO-
X35 PB-F POWER MOSFET TRANSISTOR
MOSFET N-CH 900V 1A PW-MOLD
TOSHIBA TO-220F
TOSHIBA TO-220F
TOSHIBA TO-220F
X35 PB-F POWER MOSFET TRANSISTOR
MOSFET N-CH 40V 120A DPAK
MOSFET N-CH 450V 19A TO220SIS
MOSFET N-CH 600V 3.7A TO220SIS
TOSHIBA TO252
MOSFET N-CH 40V 160A TO220SM
MOSFET N-CH 600V 6A TO220SIS
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() TK1R5R04PB,LXGQToshiba Semiconductor and Storage |
Anzahl*
|
Zielpreis (USD)
|